发明授权
- 专利标题： Method and system for diffusion and implantation in gallium nitride based devices
- 专利标题（中）： 在氮化镓基器件中扩散和注入的方法和系统
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申请号： US13240877申请日： 2011-09-22
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公开(公告)号： US08846482B2公开(公告)日： 2014-09-30
- 发明人: David P. Bour , Richard J. Brown , Isik C. Kizilyalli , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Hui Nie , Mahdan Raj
- 申请人： David P. Bour , Richard J. Brown , Isik C. Kizilyalli , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Hui Nie , Mahdan Raj
- 申请人地址： US CA San Jose
- 专利权人： Avogy, Inc.
- 当前专利权人： Avogy, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L21/322 ; H01L29/778 ; H01L21/338 ; H01L21/225 ; H01L29/66 ; H01L29/20 ; H01L29/861 ; H01L29/207 ; H01L21/265 ; H01L29/808 ; H01L29/872
摘要：
A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.
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