发明授权
- 专利标题： Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
- 专利标题（中）： 半导体器件包括替代栅电极结构和由后接触填充形成的自对准接触元件
-
申请号： US13241915申请日： 2011-09-23
-
公开(公告)号： US08846513B2公开(公告)日： 2014-09-30
- 发明人: Peter Baars , Richard Carter , Rolf Stephan
- 申请人： Peter Baars , Richard Carter , Rolf Stephan
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/768 ; H01L29/66 ; H01L21/285 ; H01L29/78
摘要：
When forming self-aligned contact elements in sophisticated semiconductor devices in which high-k metal gate electrode structures are to be provided on the basis of a replacement gate approach, the self-aligned contact openings are filled with an appropriate fill material, such as polysilicon, while the gate electrode structures are provided on the basis of a placeholder material that can be removed with high selectivity with respect to the sacrificial fill material. In this manner, the high-k metal gate electrode structures may be completed prior to actually filling the contact openings with an appropriate contact material after the removal of the sacrificial fill material. In one illustrative embodiment, the placeholder material of the gate electrode structures is provided in the form of a silicon/germanium material.
公开/授权文献
信息查询
IPC分类:
