发明授权
US08847173B2 Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
有权
气体离子源及其使用方法，离子束装置和发射极尖端及其制造方法
- 专利标题： Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
- 专利标题（中）： 气体离子源及其使用方法，离子束装置和发射极尖端及其制造方法
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申请号： US13811392申请日： 2011-07-13
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公开(公告)号： US08847173B2公开(公告)日： 2014-09-30
- 发明人: Yoshimi Kawanami , Shinichi Matsubara , Hironori Moritani , Noriaki Arai , Hiroyasu Shichi , Tomihiro Hashizume , Hiroyasu Kaga , Norihide Saho , Hiroyuki Muto , Yoichi Ose
- 申请人： Yoshimi Kawanami , Shinichi Matsubara , Hironori Moritani , Noriaki Arai , Hiroyasu Shichi , Tomihiro Hashizume , Hiroyasu Kaga , Norihide Saho , Hiroyuki Muto , Yoichi Ose
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2010-177356 20100806
- 国际申请： PCT/JP2011/065977 WO 20110713
- 国际公布： WO2012/017789 WO 20120209
- 主分类号： H01J37/26
- IPC分类号： H01J37/26 ; H01J1/304 ; H01J37/08 ; B23K9/00
摘要：
To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.
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