发明授权
- 专利标题: Image sensor and method of manufacturing
- 专利标题(中): 图像传感器及制造方法
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申请号: US13349221申请日: 2012-01-12
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公开(公告)号: US08847286B2公开(公告)日: 2014-09-30
- 发明人: Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
- 申请人: Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: H01L27/148
- IPC分类号: H01L27/148
摘要:
An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
公开/授权文献
- US20130181258A1 IMAGE SENSOR AND METHOD OF MANUFACTURING 公开/授权日:2013-07-18
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