发明授权
- 专利标题： Bump with protection structure
- 专利标题（中）： 有保护结构的凹凸
-
申请号： US13267200申请日： 2011-10-06
-
公开(公告)号： US08847388B2公开(公告)日： 2014-09-30
- 发明人: Chen-Hua Yu , Hung-Pin Chang , An-Jhih Su , Tsang-Jiuh Wu , Wen-Chih Chiou , Shin-Puu Jeng
- 申请人： Chen-Hua Yu , Hung-Pin Chang , An-Jhih Su , Tsang-Jiuh Wu , Wen-Chih Chiou , Shin-Puu Jeng
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L23/29
摘要：
A semiconductor device includes a bump structure formed on a post-passivation interconnect (PPI) line and surrounded by a protection structure. The protection structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the top surface of the polymer layer, underlying the polymer layer, inserted between the bump structure and the polymer layer, inserted between the PPI line and the polymer layer, covering the exterior sidewalls of the polymer layer, or combinations thereof.
公开/授权文献
- US20130087908A1 BUMP WITH PROTECTION STRUCTURE 公开/授权日：2013-04-11
信息查询
IPC分类:
