发明授权
US08847636B2 Implementing voltage feedback gate protection for CMOS output drivers
有权
为CMOS输出驱动器实现电压反馈栅极保护
- 专利标题: Implementing voltage feedback gate protection for CMOS output drivers
- 专利标题(中): 为CMOS输出驱动器实现电压反馈栅极保护
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申请号: US13443209申请日: 2012-04-10
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公开(公告)号: US08847636B2公开(公告)日: 2014-09-30
- 发明人: Michael K. Kerr , William F. Lawson
- 申请人: Michael K. Kerr , William F. Lawson
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Joan Pennington
- 主分类号: H03B1/00
- IPC分类号: H03B1/00 ; H03K3/00 ; H03K5/12 ; H03L5/00
摘要:
A method and circuit for implementing protection for complementary metal oxide semiconductor (CMOS) output drivers, and a design structure on which the subject circuit resides are provided. An output driver stage transistor stack includes a plurality of series connected PFETs series connected with a plurality of series connected NFETs connected between upper and lower voltage supply rails. A pair of offset DC voltage levels provides respective gate voltages of an intermediate PFET and an intermediate NFET in the output driver stage transistor stack. A pair of pre-driver circuits receiving voltage level translated logic signals drive respective gate inputs of the upper PFET and the lower NFET in the output driver stage transistor stack. A voltage feedback circuit provides respective gate voltages of the PFET and NFET connected together in the output driver stage transistor stack.
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