发明授权
- 专利标题： Electrical contacts to nanostructured areas
- 专利标题（中）： 与纳米结构区域的电接触
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申请号： US13622864申请日： 2012-09-19
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公开(公告)号： US08852981B2公开(公告)日： 2014-10-07
- 发明人: Marcie R. Black , Joanne Forziati , Michael Jura , Jeff Miller , Brian Murphy , Adam Standley
- 申请人： Bandgap Engineering, Inc.
- 申请人地址： US NH Salem
- 专利权人： Bandgap Engineering, Inc.
- 当前专利权人： Bandgap Engineering, Inc.
- 当前专利权人地址： US NH Salem
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/283 ; H01L21/285 ; H01L29/06 ; H01L29/41 ; H01L31/0224 ; H01L31/0352
摘要：
A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.
公开/授权文献
- US20130099345A1 ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS 公开/授权日：2013-04-25
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