Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13368584Application Date: 2012-02-08
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Publication No.: US08853010B2Publication Date: 2014-10-07
- Inventor: Heung-Kyu Park , Woo-Bin Song , Nam-Kyu Kim , Su-Jin Jung , Byeong-Chan Lee , Young-Pil Kim , Sun-Ghil Lee
- Applicant: Heung-Kyu Park , Woo-Bin Song , Nam-Kyu Kim , Su-Jin Jung , Byeong-Chan Lee , Young-Pil Kim , Sun-Ghil Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2011-0065545 20110701
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/337 ; H01L21/338 ; H01L21/339 ; H01L29/165 ; H01L29/78 ; H01L29/66 ; H01L21/8238
Abstract:
A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region.
Public/Granted literature
- US20130005096A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-01-03
Information query
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