发明授权
US08853043B2 Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
有权
硅锗（SiGe）异质结双极晶体管（HBT）
- 专利标题： Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- 专利标题（中）： 硅锗（SiGe）异质结双极晶体管（HBT）
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申请号： US13610641申请日： 2012-09-11
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公开(公告)号： US08853043B2公开(公告)日： 2014-10-07
- 发明人: Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
- 申请人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Law Office of Charles W. Peterson, Jr.
- 代理商 Anthony Canale
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8222 ; H01L29/737 ; H01L29/10 ; H01L21/8249
摘要：
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.