发明授权
- 专利标题: Method of manufacturing semiconductor light emitting device
- 专利标题(中): 制造半导体发光器件的方法
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申请号: US13523571申请日: 2012-06-14
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公开(公告)号: US08859314B2公开(公告)日: 2014-10-14
- 发明人: Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
- 申请人: Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2011-0058004 20110615
- 主分类号: H01L33/32
- IPC分类号: H01L33/32 ; H01L33/00
摘要:
There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.