发明授权
- 专利标题： Optical structure of semiconductor photomultiplier and fabrication method thereof
- 专利标题（中）： 半导体光电倍增管的光学结构及其制造方法
-
申请号： US13324973申请日： 2011-12-13
-
公开(公告)号： US08860163B2公开(公告)日： 2014-10-14
- 发明人: Joon Sung Lee , Yong Sun Yoon
- 申请人： Joon Sung Lee , Yong Sun Yoon
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2010-0129841 20101217
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; G01T1/24 ; G01J1/02 ; H01L31/0232 ; G01T1/20 ; G01J1/04 ; H01L27/146
摘要：
Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.
公开/授权文献
信息查询
IPC分类:
