发明授权
US08861257B2 Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element
有权
非易失性存储元件，其制造方法，非易失性存储器件以及用于非易失性存储元件的设计支持方法
- 专利标题： Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element
- 专利标题（中）： 非易失性存储元件，其制造方法，非易失性存储器件以及用于非易失性存储元件的设计支持方法
-
申请号： US13634700申请日： 2011-11-24
-
公开(公告)号： US08861257B2公开(公告)日： 2014-10-14
- 发明人: Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
- 申请人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2010-261853 20101124
- 国际申请： PCT/JP2011/006526 WO 20111124
- 国际公布： WO2012/070238 WO 20120531
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L27/10 ; H01L45/00 ; H01L27/02 ; H01L27/24 ; G11C13/00
摘要：
A nonvolatile memory element includes a variable resistance layer located between a lower electrode and an upper electrode and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer includes at least two layers: a first variable resistance layer including a first transition metal oxide; and a second variable resistance layer including a second transition metal oxide and a transition metal compound. The second transition metal oxide has an oxygen content atomic percentage lower than an oxygen content atomic percentage of the first transition metal oxide, the transition metal compound contains either oxygen and nitrogen or oxygen and fluorine, and the second transition metal oxide and the transition metal compound are in contact with the first variable resistance layer.
公开/授权文献
信息查询
