发明授权
- 专利标题: Patterning process and resist composition
- 专利标题(中): 图案化过程和抗蚀剂组成
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申请号: US13614494申请日: 2012-09-13
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公开(公告)号: US08865390B2公开(公告)日: 2014-10-21
- 发明人: Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
- 申请人: Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2011-202930 20110916
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/30 ; G03F7/039 ; G03F7/20 ; G03F1/00 ; G03F7/32 ; G03F7/11
摘要:
A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
公开/授权文献
- US20130071788A1 PATTERNING PROCESS AND RESIST COMPOSITION 公开/授权日:2013-03-21
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