发明授权
- 专利标题： Preparation method for reduced graphene oxide using sulfonyl hydrazide-based reducing agent and optoelectronic devices thereof
- 专利标题（中）： 使用磺酰肼类还原剂还原石墨烯氧化物的制备方法及其光电器件
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申请号： US13356965申请日： 2012-01-24
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公开(公告)号： US08865515B2公开(公告)日： 2014-10-21
- 发明人: Seok In Na , Dong Yu Kim , Hye Young Koo , Jin Mun Yun , Jun Seok Yeo , Jun Kyung Kim
- 申请人： Seok In Na , Dong Yu Kim , Hye Young Koo , Jin Mun Yun , Jun Seok Yeo , Jun Kyung Kim
- 申请人地址： KR Seoul
- 专利权人： Korea Institute of Science and Technology
- 当前专利权人： Korea Institute of Science and Technology
- 当前专利权人地址： KR Seoul
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2011-0007470 20110125
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; B82Y10/00 ; C01B31/04 ; B82Y40/00 ; B82Y30/00 ; H01L51/00 ; H01L51/44 ; H01L51/52 ; H01L51/50
摘要：
A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.
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