摘要:
A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.