发明授权
- 专利标题: Ge-based NMOS device and method for fabricating the same
- 专利标题(中): Ge基NMOS器件及其制造方法
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申请号: US13580971申请日: 2012-02-21
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公开(公告)号: US08865543B2公开(公告)日: 2014-10-21
- 发明人: Ru Huang , Zhiqiang Li , Xia An , Yue Guo , Xing Zhang
- 申请人: Ru Huang , Zhiqiang Li , Xia An , Yue Guo , Xing Zhang
- 申请人地址: CN Beijing
- 专利权人: Peking University
- 当前专利权人: Peking University
- 当前专利权人地址: CN Beijing
- 代理机构: Park, Kim & Suh, LLC
- 优先权: CN201110170991 20110623
- 国际申请: PCT/CN2012/071390 WO 20120221
- 国际公布: WO2012/174871 WO 20121227
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242 ; H01L29/78 ; H01L29/66 ; H01L29/51
摘要:
The embodiments of the present invention provide a Ge-based NMOS device structure and a method for fabricating the same. By using the method, double dielectric layers of germanium oxide (GeO2) and metal oxide are deposited between the source/drain region and the substrate. The present invention not only reduces the electron Schottky barrier height of metal/Ge contact, but also improves the current switching ratio of the Ge-based Schottky and therefore, it will improve the performance of the Ge-based Schottky NMOS transistor. In addition, the fabrication process is very easy and completely compatible with the silicon CMOS process. As compared with conventional fabrication method, the Ge-based NMOS device structure and the fabrication method in the present invention can easily and effectively improve the performance of the Ge-based Schottky NMOS transistor.
公开/授权文献
- US20140117465A1 GE-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日:2014-05-01