According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.