Invention Grant
- Patent Title: Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein
- Patent Title (中): 具有用于减少其位错缺陷的子结构的发光半导体器件
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Application No.: US13314186Application Date: 2011-12-08
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Publication No.: US08866161B2Publication Date: 2014-10-21
- Inventor: Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
- Applicant: Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: TW97123450A 20080624
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/15 ; H01L21/02 ; H01L33/00 ; H01S5/323
Abstract:
A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.
Public/Granted literature
- US20120080715A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-04-05
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