发明授权
- 专利标题： Semiconductor chip device with polymeric filler trench
- 专利标题（中）： 具有聚合物填充沟槽的半导体芯片器件
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申请号： US14132557申请日： 2013-12-18
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公开(公告)号： US08866276B2公开(公告)日： 2014-10-21
- 发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- 申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- 申请人地址： US CA Sunnyvale CA Markham
- 专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人地址： US CA Sunnyvale CA Markham
- 代理商 Timothy M. Honeycutt
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/56 ; H01L23/498 ; H01L25/065 ; H01L23/367 ; H01L23/31 ; H01L23/29 ; H01L23/24 ; H01L23/00 ; H01L23/495 ; H01L23/14
摘要：
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
公开/授权文献
- US20140103506A1 SEMICONDUCTOR CHIP DEVICE WITH POLYMERIC FILLER TRENCH 公开/授权日：2014-04-17
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