发明授权
US08877429B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
有权
用于制造抗蚀剂图案的树脂组合物不溶性，以及通过使用它们形成抗蚀剂图案的方法
- 专利标题： Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
- 专利标题（中）： 用于制造抗蚀剂图案的树脂组合物不溶性，以及通过使用它们形成抗蚀剂图案的方法
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申请号： US13004898申请日： 2011-01-12
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公开(公告)号： US08877429B2公开(公告)日： 2014-11-04
- 发明人: Gouji Wakamatsu , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
- 申请人： Gouji Wakamatsu , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-183038 20080714
- 主分类号： G03F7/095
- IPC分类号： G03F7/095 ; G03F7/26 ; G03F7/004 ; G03F7/00 ; H01L21/027 ; G03F7/039
摘要：
A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.