Invention Grant
US08884266B2 Thin film transistor using a carbon nanotube as a channel and a display device including the same
有权
使用碳纳米管作为通道的薄膜晶体管和包括该纳米管的显示装置
- Patent Title: Thin film transistor using a carbon nanotube as a channel and a display device including the same
- Patent Title (中): 使用碳纳米管作为通道的薄膜晶体管和包括该纳米管的显示装置
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Application No.: US13495045Application Date: 2012-06-13
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Publication No.: US08884266B2Publication Date: 2014-11-11
- Inventor: Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
- Applicant: Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
- Applicant Address: KR Yongin, Gyeonggi-Do KR Seoul
- Assignee: Samsung Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee: Samsung Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee Address: KR Yongin, Gyeonggi-Do KR Seoul
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2011-0119545 20111116
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L51/05 ; H01L27/32 ; H01L51/00
Abstract:
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
Public/Granted literature
- US20130119345A1 THIN FILM TRANSISTOR AND A DISPLAY DEVICE INCLUDING THE SAME Public/Granted day:2013-05-16
Information query
IPC分类:
