Invention Grant
- Patent Title: Graphene electronic device and method of fabricating the same
- Patent Title (中): 石墨烯电子器件及其制造方法
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Application No.: US14035305Application Date: 2013-09-24
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Publication No.: US08884345B2Publication Date: 2014-11-11
- Inventor: Jin-seong Heo , Hyun-jong Chung , Sun-ae Seo , Sung-hoon Lee , Hee-jun Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0032192 20110407
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/78 ; H01L29/66 ; H01L29/16 ; H01L29/786 ; H01L29/778
Abstract:
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
Public/Granted literature
- US20140021445A1 GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-23
Information query
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