公开(公告)号：US08999201B2

公开(公告)日：2015-04-07

申请号：US14162397

申请日：2014-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-hoon Lee ,  Sun-ae Seo ,  Yun-sung Woo ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/16 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L29/7781 ,  H01L29/78684

Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

Abstract translation: 提供石墨烯，其制造方法和具有石墨烯的晶体管，石墨烯包括部分被硼（B）原子和氮（N）原子取代的碳（C）原子的结构。 石墨烯具有带隙。 用硼和氮取代的石墨烯可以用作场效应晶体管的通道。 可以通过使用环硼氮烷或氨硼烷作为氮化硼（B-N）前体进行化学气相沉积（CVD）方法来形成石墨烯。

公开(公告)号：US08884345B2

公开(公告)日：2014-11-11

申请号：US14035305

申请日：2013-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Hyun-jong Chung ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hee-jun Yang

IPC: H01L29/78 ,  H01L21/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/786 ,  H01L29/778

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US09496635B2

公开(公告)日：2016-11-15

申请号：US14644673

申请日：2015-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-bum Lee ,  Seok-heon Lee ,  Sung-hoon Lee

IPC: H01R12/00 ,  H01R12/70 ,  G06K7/04

CPC classification number: H01R12/7094 ,  G06K7/04

Abstract: A memory card identification device, a host device using the memory card, and a memory card are provided. The memory card identification device includes: a card socket comprising a single card slot through which at least two kinds of memory cards can be inserted and a target port disposed to be in contact with any one kind of a target memory card based on an external characteristic difference between different kinds of memory cards; and a card type detector configured to determine a type of a memory card inserted in the card socket by using a contact state signal of the target port.

Abstract translation: 提供存储卡识别装置，使用存储卡的主机装置和存储卡。 存储卡识别装置包括：卡插槽，其包括单个卡槽，可以插入至少两种存储卡，以及基于外部特性设置为与任何一种目标存储卡接触的目标端口 不同种类的存储卡之间的差异; 以及卡型检测器，被配置为通过使用目标端口的接触状态信号来确定插入到卡插槽中的存储卡的类型。

公开(公告)号：US09329316B2

公开(公告)日：2016-05-03

申请号：US14470002

申请日：2014-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG DISPLAY CO., LTD.

Inventor： Joon-yong Park ,  Jung-gun Nam ,  Byung-hoon Kim ,  Dae-young Lee ,  Sung-hoon Lee ,  Gug-rae Jo ,  Atsushi Takakuwa ,  Suk Gyu Hahm

IPC: G02F1/1335 ,  G02B5/30

CPC classification number: G02B5/3058 ,  G02B2207/107 ,  G02F1/133536 ,  G02F2001/133548

Abstract: A wire grid polarizer includes: a substrate; a wire grid layer disposed on the substrate and including a plurality of wire patterns arranged at regular intervals; and a passivation layer disposed on the substrate to cover the wire grid layer and including a material having a refractive index less than 1.4.

Abstract translation: 线栅偏振器包括：基板; 线栅层，其设置在所述基板上并且包括以规则间隔布置的多个线图案; 以及钝化层，设置在基板上以覆盖线栅层并且包括折射率小于1.4的材料。

公开(公告)号：US09335582B2

公开(公告)日：2016-05-10

申请号：US14289989

申请日：2014-05-29

Applicant: Samsung Electronics Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Joon-yong Park ,  Sung-hoon Lee ,  Byung-hoon Kim ,  Jung-gun Nam ,  Dae-young Lee ,  Dae-hwan Jang ,  Gug-rae Jo ,  Atsushi Takakuwa

IPC: G02F1/1335 ,  G02B5/30 ,  G02F1/1333

CPC classification number: G02F1/133536 ,  G02B5/3058 ,  G02F1/133345 ,  G02F2001/133548 ,  G02F2202/36

Abstract: A wire grid polarizer includes a substrate, a wire grid layer which is disposed on the substrate and includes a plurality of wire patterns arranged with a predetermined interval, where gaps are defined between the wire patterns, and a passivation layer which is disposed on the wire grid layer and includes first passivation particles which cover a top portion of the gaps.

Abstract translation: 线栅偏振器包括基板，线栅层，其设置在基板上并且包括以预定间隔布置的多个线图案，其中在线图案之间限定间隙，以及布置在线上的钝化层 栅格层并且包括覆盖间隙的顶部的第一钝化颗粒。

公开(公告)号：US09323124B2

公开(公告)日：2016-04-26

申请号：US14082584

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-hoon Lee ,  Do-Hyun Kim ,  Sang-wook Kim ,  Chang-jung Kim

IPC: G09G3/36 ,  G02F1/1368

CPC classification number: G02F1/1368 ,  G09G3/3648 ,  G09G2330/027

Abstract: Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10−14 A.

Abstract translation: 提供了显示装置及其操作方法。 在显示装置中，在显示面板的电源关闭之后，显示图像可以连续保持超过约10毫秒。 显示装置可以指示包括氧化物薄膜晶体管（TFT）的液晶显示器（LCD）装置。 氧化物TFT的漏电流可以小于约10-14A。

公开(公告)号：US09257528B2

公开(公告)日：2016-02-09

申请号：US14244275

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极，栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

公开(公告)号：US09142635B2

公开(公告)日：2015-09-22

申请号：US14507235

申请日：2014-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Hyun-jong Chung ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hee-jun Yang

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/78 ,  H01L29/16 ,  H01L29/778 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US08835899B2

公开(公告)日：2014-09-16

申请号：US13957602

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/78 ,  H01L29/10 ,  B82Y40/00 ,  H01L29/16

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract translation: 提供石墨烯电子器件和制造石墨烯电子器件的方法。 石墨烯电子器件可以包括形成在疏水聚合物层上的石墨烯通道层和形成在石墨烯通道层上的钝化层。 疏水性聚合物层可以防止或减少杂质对转移的石墨烯的吸附，并且钝化层也可以防止或减少杂质对经热处理的石墨烯通道层的吸附。