A vertical NAND string device includes a semiconductor channel, where at least one end portion of the semiconductor channel extends substantially perpendicular to a major surface of a substrate, at least one semiconductor or electrically conductive landing pad embedded in the semiconductor channel, a tunnel dielectric located adjacent to the semiconductor channel, a charge storage region located adjacent to the tunnel dielectric, a blocking dielectric located adjacent to the charge storage region and a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate.