Invention Grant
US08885393B2 Memory array voltage source controller for retention and write assist
有权
存储阵列电压源控制器,用于保留和写入辅助
- Patent Title: Memory array voltage source controller for retention and write assist
- Patent Title (中): 存储阵列电压源控制器,用于保留和写入辅助
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Application No.: US13717870Application Date: 2012-12-18
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Publication No.: US08885393B2Publication Date: 2014-11-11
- Inventor: Ajay Bhatia , Hang Huang
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/00 ; G11C5/14

Abstract:
A voltage source controller for a memory array includes an input coupled to a voltage source, an output coupled to one or more memory cells of a memory array, where the output is configured to provide a cell source voltage to the memory cells. The controller also includes a switch circuit configured to: receive a retention enable signal, a write assist enable signal, and a standard mode enable signal; and based on the retention enable signal, write assist enable signal, and standard mode enable signal, selectively set the cell source voltage for one or more of the memory cells to one of: a retention voltage, a write assist voltage, or a standard mode voltage, where the retention voltage and the write assist voltage are less than the standard mode voltage.
Public/Granted literature
- US20140169075A1 MEMORY ARRAY VOLTAGE SOURCE CONTROLLER FOR RETENTION AND WRITE ASSIST Public/Granted day:2014-06-19
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