发明授权
- 专利标题： Plasma processing apparatus and electrode for same
- 专利标题（中）： 等离子体处理装置和电极相同
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申请号： US12718544申请日： 2010-03-05
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公开(公告)号： US08888951B2公开(公告)日： 2014-11-18
- 发明人: Shinji Himori
- 申请人： Shinji Himori
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权： JP2009-053423 20090306
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32
摘要：
A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.
公开/授权文献
- US20100224323A1 PLASMA PROCESSING APPARATUS AND ELECTRODE FOR SAME 公开/授权日：2010-09-09
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