发明授权
- 专利标题： Dielectric barrier deposition using nitrogen containing precursor
- 专利标题（中）： 使用含氮前体的介电阻挡层沉积
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申请号： US12772518申请日： 2010-05-03
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公开(公告)号： US08889235B2公开(公告)日： 2014-11-18
- 发明人: Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
- 申请人： Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian; Joseph D. Rossi
- 主分类号： H05H1/24
- IPC分类号： H05H1/24 ; H01L21/02 ; H01L21/314 ; H01L21/768 ; C23C16/36
摘要：
A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR′y(NR″R′″)zSi wherein R, R′, R″ and R′″ are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R′ cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.