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    ANTIREFLECTIVE COATINGS
    3.
    发明申请
    ANTIREFLECTIVE COATINGS 审中-公开
    抗反射涂层

    公开(公告)号：US20090096106A1

    公开(公告)日：2009-04-16

    申请号：US12244426

    申请日：2008-10-02

    申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

    IPC分类号： H01L23/52 ,  H01L21/311

    CPC分类号： H01L21/31144 ,  C23C16/30 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0276 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/318

    摘要： A method of forming a feature in a substrate comprising the steps of: forming a dielectric layer on a substrate; forming an antireflective coating over the dielectric layer; forming a photoresist pattern over the antireflective coating; etching the dielectric layer through the patterned photoresist; and removing the antireflective coating and the photoresist, wherein the antireflective coating is a film represented by the formula SivOwCxNuHyFz, wherein v+w+x+u+y+z=100%, v is from 1 to 35 atomic %, w is from 1 to 40 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the antireflective coating is formed by the chemical vapor deposition of a composition comprising (1) at least one precursor selected from the group consisting of an organosilane, an organosiloxane, and an aminosilane; and (2) a hydrocarbon, and wherein the hydrocarbon is substantially not removed from the antireflective coating.

    摘要翻译： 一种在衬底中形成特征的方法，包括以下步骤：在衬底上形成电介质层; 在电介质层上形成抗反射涂层; 在抗反射涂层上形成光致抗蚀剂图案; 通过图案化的光致抗蚀剂蚀刻介电层; 并且去除抗反射涂层和光致抗蚀剂，其中抗反射涂层是由式SivOwCxNuHyFz表示的膜，其中v + w + x + u + y + z = 100％，v为1至35原子％，w为 1至40原子％，x为5至80原子％，u为0至50原子％，y为10至50原子％，z为0至15原子％，其中抗反射涂层由 组合物的化学气相沉积，其包含（1）至少一种选自有机硅烷，有机硅氧烷和氨基硅烷的前体; 和（2）烃，其中烃基本上不从抗反射涂层中除去。

    Selective Etching and Formation of Xenon Difluoride
    7.
    发明申请
    Selective Etching and Formation of Xenon Difluoride 有权
    氙氟化物的选择性蚀刻和形成

    公开(公告)号：US20100022095A1

    公开(公告)日：2010-01-28

    申请号：US12360588

    申请日：2009-01-27

    申请人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    发明人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/306 ,  C01B23/00

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

    Selective etching and formation of xenon difluoride
    8.
    发明授权
    Selective etching and formation of xenon difluoride 有权
    选择性蚀刻和形成氙二氟化物

    公开(公告)号：US08278222B2

    公开(公告)日：2012-10-02

    申请号：US12360588

    申请日：2009-01-27

    申请人： Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    发明人： Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

    Amino Vinylsilane Precursors for Stressed SiN Films
    9.
    发明申请
    Amino Vinylsilane Precursors for Stressed SiN Films 有权
    用于压制SiN膜的氨基乙烯基硅烷前体

    公开(公告)号：US20100120262A1

    公开(公告)日：2010-05-13

    申请号：US12609542

    申请日：2009-10-30

    申请人： Vasil Vorsa ,  Andrew David Johnson ,  Manchao Xiao

    发明人： Vasil Vorsa ,  Andrew David Johnson ,  Manchao Xiao

    IPC分类号： H01L21/318

    CPC分类号： H01L21/02219 ,  C23C16/345 ,  C23C16/36 ,  H01L21/0217 ,  H01L21/02274

    摘要： The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR1N]xSiR3y(R2)z, where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, R1 and R3 can be hydrogen, C1 to C10 alkane, alkene, or C4 to C12 aromatic; each R2 is a vinyl, allyl or vinyl-containing functional group.

    摘要翻译： 本发明是增加等离子体增强化学气相沉积（PECVD）氮化硅（SiN）和碳氮化硅（SiCN）薄膜中的固有压应力的方法，包括从氨基乙烯基硅烷前体沉积膜。 更具体地说，本发明使用选自下式的氨基乙烯基硅烷基前体：[RR1N] xSiR3y（R2）z，其中x + y + z = 4，x = 1-3，y = 0-2，z = 1-3; R，R 1和R 3可以是氢，C 1至C 10烷烃，烯烃或C 4至C 12芳族; 每个R 2是乙烯基，烯丙基或含乙烯基的官能团。

    Amino vinylsilane precursors for stressed SiN films
    10.
    发明授权
    Amino vinylsilane precursors for stressed SiN films 有权
    用于应力SiN膜的氨基乙烯基硅烷前体

    公开(公告)号：US08580993B2

    公开(公告)日：2013-11-12

    申请号：US12609542

    申请日：2009-10-30

    申请人： Vasil Vorsa ,  Andrew David Johnson ,  Manchao Xiao

    发明人： Vasil Vorsa ,  Andrew David Johnson ,  Manchao Xiao

    IPC分类号： C07F7/10

    CPC分类号： H01L21/02219 ,  C23C16/345 ,  C23C16/36 ,  H01L21/0217 ,  H01L21/02274

    摘要： The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR1N]xSiR3y(R2)z, where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, R1 and R3 can be hydrogen, C1 to C10 alkane, alkene, or C4 to C12 aromatic; each R2 is a vinyl, allyl or vinyl-containing functional group.

    摘要翻译： 本发明是增加等离子体增强化学气相沉积（PECVD）氮化硅（SiN）和碳氮化硅（SiCN）薄膜中的固有压应力的方法，包括从氨基乙烯基硅烷前体沉积膜。 更具体地说，本发明使用选自下式的氨基乙烯基硅烷基前体：[RR1N] xSiR3y（R2）z，其中x + y + z = 4，x = 1-3，y = 0-2，z = 1-3; R，R 1和R 3可以是氢，C 1至C 10烷烃，烯烃或C 4至C 12芳族; 每个R 2是乙烯基，烯丙基或含乙烯基的官能团。