发明授权
- 专利标题： Film forming method, film forming apparatus and pattern forming method
- 专利标题（中）： 成膜方法，成膜装置和图案形成方法
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申请号： US11934308申请日： 2007-11-02
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公开(公告)号： US08889337B2公开(公告)日： 2014-11-18
- 发明人: Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
- 申请人： Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-313891 20061121
- 主分类号： G03F7/09
- IPC分类号： G03F7/09 ; B05C11/02 ; G03F7/20 ; G03F7/11 ; H01L21/67
摘要：
Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.
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