Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13812499Application Date: 2012-10-12
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Publication No.: US08889519B2Publication Date: 2014-11-18
- Inventor: Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- Applicant: Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- Applicant Address: CN Beijing
- Assignee: The institute of Microelectronics Chinese Academy of Science
- Current Assignee: The institute of Microelectronics Chinese Academy of Science
- Current Assignee Address: CN Beijing
- Agency: Treasure IP Group
- Priority: CN201210293241 20120816
- International Application: PCT/CN2012/001376 WO 20121012
- International Announcement: WO2014/026305 WO 20140220
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/161 ; H01L21/02 ; H01L21/265 ; H01L29/10 ; H01L29/165 ; H01L21/268 ; H01L29/51
Abstract:
The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.
Public/Granted literature
- US20140054658A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-02-27
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