发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13812499申请日： 2012-10-12
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公开(公告)号： US08889519B2公开(公告)日： 2014-11-18
- 发明人: Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- 申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
- 申请人地址： CN Beijing
- 专利权人： The institute of Microelectronics Chinese Academy of Science
- 当前专利权人： The institute of Microelectronics Chinese Academy of Science
- 当前专利权人地址： CN Beijing
- 代理机构： Treasure IP Group
- 优先权： CN201210293241 20120816
- 国际申请： PCT/CN2012/001376 WO 20121012
- 国际公布： WO2014/026305 WO 20140220
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/161 ; H01L21/02 ; H01L21/265 ; H01L29/10 ; H01L29/165 ; H01L21/268 ; H01L29/51
摘要：
The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.