发明授权
- 专利标题： Tunnel field effect transistor
- 专利标题（中）： 隧道场效应晶体管
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申请号： US12972057申请日： 2010-12-17
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公开(公告)号： US08890118B2公开(公告)日： 2014-11-18
- 发明人: Benjamin Chu-Kung , Gilbert Dewey , Marko Radosavljevic , Niloy Mukherjee
- 申请人： Benjamin Chu-Kung , Gilbert Dewey , Marko Radosavljevic , Niloy Mukherjee
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Winkle, PLLC
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/08 ; H01L29/739
摘要：
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the fabrication of a tunnel field effect transistor having an improved on-current level without a corresponding increasing the off-current level, achieved by the addition of a transition layer between a source and an intrinsic channel of the tunnel field effect transistor.
公开/授权文献
- US20120153263A1 TUNNEL FIELD EFFECT TRANSISTOR 公开/授权日：2012-06-21