发明授权
- 专利标题: High voltage semiconductor device
- 专利标题(中): 高压半导体器件
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申请号: US13414723申请日: 2012-03-08
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公开(公告)号: US08890144B2公开(公告)日: 2014-11-18
- 发明人: Pao-An Chang , Ching-Ming Lee , Te-Yuan Wu , Chih-Chung Wang , Wen-Fang Lee , Wei-Lun Hsu
- 申请人: Pao-An Chang , Ching-Ming Lee , Te-Yuan Wu , Chih-Chung Wang , Wen-Fang Lee , Wei-Lun Hsu
- 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L29/10 ; H01L31/00
摘要:
A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.
公开/授权文献
- US20130234141A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE 公开/授权日:2013-09-12
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