Invention Grant
- Patent Title: Lateral power MOSFET structure and method of manufacture
- Patent Title (中): 横向功率MOSFET结构及其制造方法
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Application No.: US12775440Application Date: 2010-05-06
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Publication No.: US08890244B2Publication Date: 2014-11-18
- Inventor: Cheng-Chi Lin , Chen-Yuan Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant: Cheng-Chi Lin , Chen-Yuan Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa & Buyan, LLP
- Agent Frank J. Uxa
- Priority: TW098143207 20091216
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423
Abstract:
A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.
Public/Granted literature
- US20110140201A1 LATERAL POWER MOSFET STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2011-06-16
Information query
IPC分类:
