发明授权
US08890264B2 Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
有权
具有保形金属栅电极和栅极电介质界面的氮掺杂的非平面III-V场效应晶体管
- 专利标题： Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
- 专利标题（中）： 具有保形金属栅电极和栅极电介质界面的氮掺杂的非平面III-V场效应晶体管
-
申请号： US13627971申请日： 2012-09-26
-
公开(公告)号： US08890264B2公开(公告)日： 2014-11-18
- 发明人: Gilbert Dewey , Robert S. Chau , Marko Radosavljevic , Han Wui Then , Scott B. Clendenning , Ravi Pillarisetty
- 申请人： Gilbert Dewey , Robert S. Chau , Marko Radosavljevic , Han Wui Then , Scott B. Clendenning , Ravi Pillarisetty
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L21/28
摘要：
A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.
公开/授权文献
信息查询
IPC分类:
