A memristive device includes a first electrode; a second electrode; a junction between the first electrode and the second electrode, the junction including a semiconductor matrix and particles embedded in the semiconductor matrix, the particles being configured to hold a selectable level of electrical charge, the electrical charge controlling the amount of current flowing through the junction for a given reading voltage. A method for using a memristive device includes: applying a first voltage across a memristive junction, the memristive junction including a semiconductor matrix and particles embedded in the semiconductor matrix; electrical charges introduced into the semiconductor matrix by the first programming voltage being trapped within the particles; applying a reading voltage across the memristive junction; and measuring a current across the junction, the current being reduced proportionally to the electrical charges trapped within the potential wells, the current being used to determine a state of the junction.