发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11963415申请日： 2007-12-21
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公开(公告)号： US08895405B2公开(公告)日： 2014-11-25
- 发明人: Fumihiko Inoue , Yukio Hayakawa
- 申请人： Fumihiko Inoue , Yukio Hayakawa
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 优先权： JP2006-355024 20061228
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/31 ; H01L21/469
摘要：
A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method.
公开/授权文献
- US20080166853A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日：2008-07-10
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