发明授权
- 专利标题: Carbon nanotube based silicon photovoltaic device
- 专利标题(中): 碳纳米管基硅光电器件
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申请号: US12339364申请日: 2008-12-19
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公开(公告)号: US08895841B2公开(公告)日: 2014-11-25
- 发明人: Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
- 申请人: Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 优先权: CN200810066750 20080418
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L31/0236 ; H01L31/068 ; H01L31/0224 ; H01L31/18 ; H01L31/0745
摘要:
A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
公开/授权文献
- US20090260688A1 PHOTOVOLTAIC DEVICE 公开/授权日:2009-10-22
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