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公开(公告)号：US11967657B2
公开(公告)日：2024-04-23
申请号：US16841541
申请日：2020-04-06
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/068 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/50
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号：US11935972B2
公开(公告)日：2024-03-19
申请号：US17738984
申请日：2022-05-06
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/05 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/20
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/0516 , H01L31/0682 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/50 , Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
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公开(公告)号：US20230197877A1
公开(公告)日：2023-06-22
申请号：US18107917
申请日：2023-02-09
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0747 , H01L31/068 , H01L31/0745 , H01L31/072 , H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/0747 , H01L31/0682 , H01L31/0745 , H01L31/072 , H01L31/02167 , H01L31/068 , H01L31/18 , H01L31/022441 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/50
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号：US11534833B2
公开(公告)日：2022-12-27
申请号：US17366442
申请日：2021-07-02
IPC分类号： B22F12/00 , B33Y10/00 , B33Y30/00 , B05B5/025 , B33Y70/00 , H01L31/0352 , H01L31/0312 , H01L31/0745 , H01L31/18 , B29C64/00 , H01L31/06 , H01L31/075 , B22F1/054 , B05D1/04 , B05D3/06 , C03B19/01 , C03B19/06 , B22F10/10
摘要： A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.
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公开(公告)号：US20220246775A1
公开(公告)日：2022-08-04
申请号：US17707429
申请日：2022-03-29
发明人： Shih-Yuan WANG , Shih-Ping WANG
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/105 , G02B6/136 , H01L31/028 , H01L31/0224 , H01L31/0312 , H01L31/036 , H01L31/077 , H01L31/18 , H01L31/107 , H01L31/054 , G02B6/122 , H01L23/66 , H01L31/02 , H01L31/0232 , H01L31/0236 , H01L31/024 , H01L31/0304 , H01L31/0745
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号：US20220102563A1
公开(公告)日：2022-03-31
申请号：US17532831
申请日：2021-11-22
发明人： Shih-Yuan WANG , Shih-Ping WANG
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/105 , G02B6/136 , H01L31/028 , H01L31/0224 , H01L31/0312 , H01L31/036 , H01L31/077 , H01L31/18 , H01L31/107 , H01L31/054 , G02B6/122 , H01L23/66 , H01L31/02 , H01L31/0232 , H01L31/0236 , H01L31/024 , H01L31/0304 , H01L31/0745
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号：US11133429B2
公开(公告)日：2021-09-28
申请号：US15992009
申请日：2018-05-29
申请人： The Boeing Company
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/078 , H01L31/0687 , H01L31/0745
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US20200335642A1
公开(公告)日：2020-10-22
申请号：US16918218
申请日：2020-07-01
申请人： SunPower Corporation
发明人： Seung Bum Rim , David D. Smith
IPC分类号： H01L31/0216 , H01L31/0443 , H01L31/0224 , H01L31/0745 , H01L27/142
摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
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公开(公告)号：US20200274017A1
公开(公告)日：2020-08-27
申请号：US16796960
申请日：2020-02-21
申请人： Artilux, Inc.
发明人： Yun-Chung Na , Yen-Cheng Lu , Yu-Hsuan Liu , Chung-Chih Lin , Tsung-Ting Wu , Szu-Lin Cheng
IPC分类号： H01L31/0745 , H01L31/048 , H01L31/0312
摘要： An optoelectronic device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type different from the first conductivity type, and a photoelectric conversion region between the first semiconductor region and the second semiconductor region. The photoelectric conversion region is of a third conductivity type the same as the first conductivity type.
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公开(公告)号：US20200274008A1
公开(公告)日：2020-08-27
申请号：US16825728
申请日：2020-03-20
申请人： SunPower Corporation
发明人： David D. Smith
IPC分类号： H01L31/0216 , H01L31/0368 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/02 , H01L31/028 , H01L31/0376
摘要： A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
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