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    PHOTOVOLTAIC DEVICE
    3.
    发明申请
    PHOTOVOLTAIC DEVICE 有权
    光电器件

    公开(公告)号：US20090260688A1

    公开(公告)日：2009-10-22

    申请号：US12339364

    申请日：2008-12-19

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: H01L31/00

    CPC classification number: H01L31/022466 ,  H01L31/0745 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/948

    Abstract: A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.

    Abstract translation: 光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。 硅衬底具有前表面和后表面。 本征层设置在硅衬底的前表面上。 碳纳米管结构设置在本征层上。 第一电极设置在硅衬底的后表面上。

    Method of manufacturing zinc aluminate nano-material
    4.
    发明申请
    Method of manufacturing zinc aluminate nano-material 有权
    制造铝酸锌纳米材料的方法

    公开(公告)号：US20090257947A1

    公开(公告)日：2009-10-15

    申请号：US12291302

    申请日：2008-11-06

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: C01F7/02 ,  C23C16/00 ,  C23C14/00

    CPC classification number: C01G9/00 ,  B82Y30/00 ,  C01P2004/64

    Abstract: A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

    Abstract translation: 一种制备铝酸锌纳米材料的方法，该方法包括以下步骤。 首先，提供不断增长的衬底和生长装置，并且生长装置包括加热装置和反应室。 其次，将生长的基材和一定数量的反应材料放置在反应室中，以及包含锌和铝的反应材料。 第三，将含氧气体引入反应室。 最后，将反应室加热至660〜1100℃

    Method for manufacturing iron silicide nano-wires
    6.
    发明授权
    Method for manufacturing iron silicide nano-wires 有权
    铁硅化物纳米线的制造方法

    公开(公告)号：US08119089B2

    公开(公告)日：2012-02-21

    申请号：US12291320

    申请日：2008-11-06

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: C01B21/068

    CPC classification number: C01G49/00 ,  B82Y30/00 ,  C01B33/06 ,  C01P2002/72 ,  C01P2004/16 ,  C01P2004/64

    Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.

    Abstract translation: 制造铁硅化物纳米线的方法包括以下步骤。 首先，提供铁物体和生长装置，并且生长装置包括加热装置和反应室。 其次，把铁物放入反应室。 第三，将含硅气体引入反应室。 最后，将反应室加热至600〜1200℃

    Method of manufacturing silicon nano-structure
    7.
    发明授权
    Method of manufacturing silicon nano-structure 有权
    硅纳米结构的制造方法

    公开(公告)号：US07888271B2

    公开(公告)日：2011-02-15

    申请号：US12291301

    申请日：2008-11-06

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: H01L21/31

    CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/06 ,  Y10S438/903 ,  Y10S977/855 ,  Y10S977/857

    Abstract: A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.

    Abstract translation: 一种制造硅纳米结构的方法，该方法包括以下步骤。 首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。 其次，将生长的基材和一定数量的催化剂分别置于反应室中。 第三，将含硅气体和氢气引入反应室。 最后，将反应室加热到500〜1100℃

    PHOTOVOLTAIC DEVICE
    8.
    发明申请
    PHOTOVOLTAIC DEVICE 有权
    光电器件

    公开(公告)号：US20090250114A1

    公开(公告)日：2009-10-08

    申请号：US12339370

    申请日：2008-12-19

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: H01L31/0216

    CPC classification number: H01L31/03529 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/0236 ,  Y02E10/50

    Abstract: A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate.

    Abstract translation: 光伏器件包括硅衬底，掺杂硅层，第一电极和第二电极。 硅衬底具有限定在其中的多个空腔。 掺杂硅层形成为与硅衬底接触。 包括多个碳纳米管电缆的第一电极与硅衬底相邻。 第二电极附接到硅衬底。

    Method for manufacturing nickel silicide nano-wires
    10.
    发明授权
    Method for manufacturing nickel silicide nano-wires 有权
    镍硅化物纳米线的制造方法

    公开(公告)号：US08349146B2

    公开(公告)日：2013-01-08

    申请号：US12291299

    申请日：2008-11-06

    Applicant: Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    Inventor： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC: C23C14/10

    CPC classification number: C01B33/06 ,  C30B23/00 ,  C30B29/10 ,  C30B29/60

    Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.

    Abstract translation: 一种制造硅化镍纳米线的方法，该方法包括以下步骤。 首先，提供硅衬底和生长装置，并且生长装置包括反应室。 其次，在硅衬底的表面上形成二氧化硅层。 第三，在二氧化硅层上形成钛层。 第四，将硅衬底放入反应室中，并将反应室加热至500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

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