发明授权
- 专利标题： Method of forming finFET of variable channel width
- 专利标题（中）： 形成可变通道宽度的finFET的方法
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申请号： US13736111申请日： 2013-01-08
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公开(公告)号： US08896067B2公开(公告)日： 2014-11-25
- 发明人: Marc Adam Bergendahl , David Vaclav Horak , Shom Ponoth , Chih-Chao Yang , Charles William Koburger, III
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L29/66 ; H01L27/088
摘要：
Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of fins with a second dielectric material, the bottom second portion of the first group and the second group of fins having a same height; exposing a middle third portion of the first and second groups of fins to an oxidizing environment to create an oxide section that separates the top first portion from the bottom second portion of the first and second groups of fins; and forming one or more fin-type field-effect-transistors (FinFETs) using the top first portion of the first and second groups of fins as fins under gates of the one or more FinFETs.
公开/授权文献
- US20140191323A1 METHOD OF FORMING FINFET OF VARIABLE CHANNEL WIDTH 公开/授权日：2014-07-10
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