Invention Grant
US08897078B2 Method, apparatus, and system for improved read operation in memory
有权
用于改善存储器中的读取操作的方法，装置和系统
- Patent Title: Method, apparatus, and system for improved read operation in memory
- Patent Title (中): 用于改善存储器中的读取操作的方法，装置和系统
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Application No.: US13915255Application Date: 2013-06-11
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Publication No.: US08897078B2Publication Date: 2014-11-25
- Inventor: Seiichi Aritome
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C11/56
Abstract:
Various embodiments include methods, apparatus, and systems for reading an adjacent cell of a memory array in an electronic device to determine a threshold voltage value of the adjacent cell, the adjacent cell being adjacent a target cell, and reading the target cell of the memory array using a wordline voltage value based on the threshold voltage value of the adjacent cell. Additional apparatus, systems, and methods are described.
Public/Granted literature
- US20130272064A1 METHOD, APPARATUS, AND SYSTEM FOR IMPROVED READ OPERATION IN MEMORY Public/Granted day:2013-10-17
Information query
