Invention Grant
US08900405B2 Plasma immersion ion implantation reactor with extended cathode process ring
有权
具有扩展阴极工艺环的等离子体浸没离子注入反应器
- Patent Title: Plasma immersion ion implantation reactor with extended cathode process ring
- Patent Title (中): 具有扩展阴极工艺环的等离子体浸没离子注入反应器
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Application No.: US11985579Application Date: 2007-11-14
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Publication No.: US08900405B2Publication Date: 2014-12-02
- Inventor: Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
- Applicant: Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306 ; H01J37/32
Abstract:
The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
Public/Granted literature
- US20090120367A1 Plasma immersion ion implantation reactor with extended cathode process ring Public/Granted day:2009-05-14
Information query
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