发明授权
US08900654B2 Methods of polymerizing silanes and cyclosilanes using N-heterocyclic carbenes, metal complexes having N-heterocyclic carbene ligands, and lanthanide compounds
有权
使用N-杂环卡宾聚合硅烷和环硅烷的方法，具有N-杂环卡宾配体的金属络合物和镧系元素化合物
- 专利标题： Methods of polymerizing silanes and cyclosilanes using N-heterocyclic carbenes, metal complexes having N-heterocyclic carbene ligands, and lanthanide compounds
- 专利标题（中）： 使用N-杂环卡宾聚合硅烷和环硅烷的方法，具有N-杂环卡宾配体的金属络合物和镧系元素化合物
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申请号： US13194472申请日： 2011-07-29
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公开(公告)号： US08900654B2公开(公告)日： 2014-12-02
- 发明人: Klaus Kunze , Gregory Nyce , Wenzhuo Guo
- 申请人： Klaus Kunze , Gregory Nyce , Wenzhuo Guo
- 申请人地址： NO Oslo
- 专利权人： Thin Film Electronics, Inc.
- 当前专利权人： Thin Film Electronics, Inc.
- 当前专利权人地址： NO Oslo
- 代理机构： Central California IP Group, P.C.
- 代理商 Andrew D. Fortney
- 主分类号： B05D5/12
- IPC分类号： B05D5/12 ; H01L51/00 ; H01B3/18 ; C01B33/04 ; C01B6/06
摘要：
Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.
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