Invention Grant
- Patent Title: MTJ element for STT MRAM
- Patent Title (中): STT MRAM的MTJ元素
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Application No.: US13525502Application Date: 2012-06-18
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Publication No.: US08900884B2Publication Date: 2014-12-02
- Inventor: Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
- Applicant: Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/82
Abstract:
An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
Public/Granted literature
- US20130334629A1 MTJ Element for STT MRAM Public/Granted day:2013-12-19
Information query
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