Invention Grant
- Patent Title: Material with tunable index of refraction
- Patent Title (中): 材料具有可调折射率
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Application No.: US13738684Application Date: 2013-01-10
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Publication No.: US08900897B2Publication Date: 2014-12-02
- Inventor: Philip Kraus , Thai Cheng Chua , Yoga Saripalli
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; G02B1/10 ; G02F1/15 ; H01L33/60 ; H01L31/00 ; H01L33/44 ; H01S5/00
Abstract:
Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.
Public/Granted literature
- US20140191262A1 MATERIAL WITH TUNABLE INDEX OF REFRACTION Public/Granted day:2014-07-10
Information query
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