Invention Grant
US08901656B2 Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
有权
半导体晶片，场效晶体管，半导体晶片的制造方法以及场效应晶体管的制造方法
- Patent Title: Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
- Patent Title (中): 半导体晶片，场效晶体管，半导体晶片的制造方法以及场效应晶体管的制造方法
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Application No.: US14015775Application Date: 2013-08-30
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Publication No.: US08901656B2Publication Date: 2014-12-02
- Inventor: Takeshi Aoki , Hisashi Yamada , Noboru Fukuhara , Masahiko Hata , Masafumi Yokoyama , SangHyeon Kim , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda
- Applicant: Sumitomo Chemical Company, Limited , The University of Tokyo , National Institute of Advanced Industrial Science and Technology
- Applicant Address: JP Tokyo JP Tokyo JP Tokyo
- Assignee: Sumitomo Chemical Company, Limited,The University of Tokyo,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Sumitomo Chemical Company, Limited,The University of Tokyo,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo JP Tokyo JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-045510 20110302
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/20 ; H01L29/78 ; H01L29/66 ; H01L21/762 ; H01L29/786 ; H01L29/778 ; H01L29/20 ; H01L29/51
Abstract:
Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.
Public/Granted literature
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