发明授权
- 专利标题： Gate structure for semiconductor device
- 专利标题（中）： 半导体器件的栅极结构
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申请号： US13335431申请日： 2011-12-22
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公开(公告)号： US08901665B2公开(公告)日： 2014-12-02
- 发明人: Andrew Joseph Kelly , Pei-Shan Chien , Yung-Ta Li , Chan Syun Yang
- 申请人： Andrew Joseph Kelly , Pei-Shan Chien , Yung-Ta Li , Chan Syun Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
The present disclosure provides a method of semiconductor fabrication including forming an inter-layer dielectric (ILD) layer on a semiconductor substrate. The ILD layer has an opening defined by sidewalls of the ILD layer. A spacer element is formed on the sidewalls of the ILD layer. A gate structure is formed in the opening adjacent the spacer element. In an embodiment, the sidewall spacer also for a decrease in the dimensions (e.g., length) of the gate structure formed in the opening.
公开/授权文献
- US20130161762A1 GATE STRUCTURE FOR SEMICONDUCTOR DEVICE 公开/授权日：2013-06-27
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