发明授权
- 专利标题： Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film
- 专利标题（中）： 具有单晶碳化硅膜的基材，单晶碳化硅膜的制造方法以及使用单晶碳化硅膜制造基材的方法
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申请号： US13173646申请日： 2011-06-30
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公开(公告)号： US08906487B2公开(公告)日： 2014-12-09
- 发明人: Hiroyuki Shimada
- 申请人： Hiroyuki Shimada
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2010-164778 20100722
- 主分类号： B32B3/24
- IPC分类号： B32B3/24 ; B32B3/30 ; C30B25/02 ; C30B25/04 ; C30B25/18 ; H01L21/20 ; H01L21/205 ; C30B29/36 ; H01L21/02 ; C30B29/06
摘要：
In a base material with a single-crystal silicon carbide film according to an embodiment of the invention, a plurality of recessed portions is formed on the surface of a silicon substrate, an insulating film including silicon oxide is formed across the surface of the silicon substrate including the inner surfaces of the recessed portions, the top surfaces of side wall portions of recessed portions of the insulating film form flat surfaces, a single-crystal silicon carbide film is joined on the flat surfaces, and the recessed portions below the single-crystal silicon carbide film form holes.