发明授权
- 专利标题： Method of semiconductor manufacturing process
- 专利标题（中）： 半导体制造工艺方法
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申请号： US13163378申请日： 2011-06-17
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公开(公告)号： US08906778B2公开(公告)日： 2014-12-09
- 发明人: YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
- 申请人： YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
- 申请人地址： TW
- 专利权人： National Chiao Tung University
- 当前专利权人： National Chiao Tung University
- 当前专利权人地址： TW
- 代理机构： Volpe and Koenig, P.C.
- 优先权： TW100107823A 20110308
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46 ; H01L21/02 ; H01L21/18 ; H01L33/00
摘要：
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
公开/授权文献
- US20120231614A1 METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS 公开/授权日：2012-09-13
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