公开(公告)号：US08906778B2

公开(公告)日：2014-12-09

申请号：US13163378

申请日：2011-06-17

申请人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

发明人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/02 ,  H01L21/18 ,  H01L33/00

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/187 ,  H01L33/0079

摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.

摘要翻译： 本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并且改变生长衬底和半导体衬底的温度。

公开(公告)号：US20120231614A1

公开(公告)日：2012-09-13

申请号：US13163378

申请日：2011-06-17

申请人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

发明人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/187 ,  H01L33/0079

摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.

摘要翻译： 本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并改变生长衬底和半导体衬底的温度。

公开(公告)号：US20120292630A1

公开(公告)日：2012-11-22

申请号：US13154445

申请日：2011-06-07

申请人： Yew-Chung Sermon Wu ,  Feng-Ching Hsiao ,  Yu-Chung Chen ,  Bo-Hsiang Tseng ,  Bo-Wen Lin ,  Chun-Yen Peng ,  Wen-Ching Hsu

发明人： Yew-Chung Sermon Wu ,  Feng-Ching Hsiao ,  Yu-Chung Chen ,  Bo-Hsiang Tseng ,  Bo-Wen Lin ,  Chun-Yen Peng ,  Wen-Ching Hsu

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/32 ,  H01L33/007

摘要： A light emitting diode (LED) substrate including a sapphire substrate is provided. The sapphire substrate has a surface consisting of a plurality of upper trigonal and lower hexagonal tapers, wherein each of the upper trigonal and lower hexagonal tapers is consisted of a hexagonal taper and a trigonal taper on the hexagonal taper, and a pitch of the upper trigonal and lower hexagonal tapers is less than 10 μm. This LED substrate has high light-emitting efficiency.

摘要翻译： 提供了包括蓝宝石衬底的发光二极管（LED）衬底。 蓝宝石衬底具有由多个上三角和六边形锥形组成的表面，其中上三角形和六边形锥形中的每一个由六边形锥形和六边形锥形上的三角锥形组成，并且上三角形 而较低的六角形锥度小于10μm。 该LED基板具有高发光效率。